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Kinetic model and simulation for chemical amplification resistsFUKUDA, H; OKAZAKI, S.Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 675-679, issn 0013-4651Article

Crosslinking in halogen containing novolac electron beam negative resistsLAMPE, I. V; REINHARDT, M.Polymer engineering and science. 1995, Vol 35, Num 2, pp 180-183, issn 0032-3888Article

Negative differential resistance (NDR) frequency conversion with gainHWU, R. J; DJUANDI, A; LEE, S. C et al.IEEE transactions on microwave theory and techniques. 1993, Vol 41, Num 5, pp 890-893, issn 0018-9480Article

Dry etching rate of electron-beam-exposed negative resistsMADJAROVA, N. A; PIRINOVA, T. P; TZANEVA, V. N et al.Semiconductor science and technology. 1992, Vol 7, Num 5, pp 691-693, issn 0268-1242Article

Polymersysteme für NegativröntgenresistsLAMPE, V. I; LORKOWSKI, H.-J; KUDRJASHOV, V. A et al.Journal für Signalaufzeichnungsmaterialien. 1990, Vol 18, Num 3, pp 205-209, issn 0323-598XArticle

Polysiloxanes with pendant cinnamoyl groups: as a negative deep UV resist for bilayer applicationROSILIO, C; ROSILIO, A; SERRE-MOUANDA, B et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2350-2354, issn 0013-4651, 5 p.Article

On the design of optimal switched-capacitor filters based on the use of lossy frequency-dependent negative-resistance prototype structuresYOUNIS, A. T; MASSARA, R. E.IEE proceedings. Part G. Circuits devices and systems. 1989, Vol 136, Num 6, pp 351-357, issn 0956-3768Article

A negative, deep-UV resist for 248 nm lithographyO'TOOLE, M. M; DE GRANDPRE, M. P; FEELY, W. E et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 4, pp 1026-1027, issn 0013-4651Article

Effect of molecular weight distribution on e-beam exposure properties of polystyreneKUMAR DEY, Ripon; BO CUI.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 24, issn 0957-4484, 245302.1-245302.5Article

A study on post exposure delay of negative tone resist and its chemistryTOUKHY, Medhat; PAUNESCU, Margareta; CHUNWEI CHEN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79721L.1-79721.7, 2Conference Paper

Enhanced oxygen plasma stripping of P⁺-implanted negative resist by hydrogen plasma pretreatment : temperature effectsLOONG, W.-A; YEN, M.-S.Electronics Letters. 1991, Vol 27, Num 12, pp 1079-1081, issn 0013-5194, 3 p.Article

Homeomorphic piecewise-linear resistive networksPRASAD, V. C; PREM PRAKASH, V.IEEE transactions on circuits and systems. 1988, Vol 35, Num 2, pp 251-253, issn 0098-4094Article

Stabilité des autooscillations dans une ligne longue chargée par une résistance négative et une capacitéIVANOV, YU. D.Radiotehnika i èlektronika. 1988, Vol 33, Num 1, pp 113-122, issn 0033-8494Article

A new triple-well resonant tunneling diode with controllable double-negative resistanceMIZUTA, H; TANOUE, T; TAKAHASHI, S et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1951-1956, issn 0018-9383, 1Article

Internal and external field fluctuations of a laser oscillator. II: Electrical circuit theoryNILSSON, O; YAMAMOTO, Y; MACHIDA, S et al.IEEE journal of quantum electronics. 1986, Vol 22, Num 10, pp 2043-2051, issn 0018-9197Article

Evaluation of bis(perfluorophenyl azide)s as cross-linkers for a soluble polyimideYAN, M; SUI XIONG CAI; WYBOURNE, M. N et al.Journal of material chemistry. 1996, Vol 6, Num 8, pp 1249-1252, issn 0959-9428Article

Theory of hot-electron injection in CHINT/NERFET devicesGRINBERG, A. A; KASTALSKY, A; LURYI, S et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 409-419, issn 0018-9383Article

Plasma-developable electron-beam resistsYONEDA, Y; FUKUYAMA, S.-I.Fujitsu scientific and technical journal. 1987, Vol 23, Num 1, pp 37-43, issn 0016-2523Article

Caractéristiques courant-tension d'un négavaristorMOLOTKOV, V. I; ZAJTSEV, M. L.Radiotehnika (Moskva). 1987, Num 7, pp 21-24, issn 0033-8486Article

Etching of buried photoresist layers and its application to the formation of three-dimensional layered structuresWATANABE, T; SAMESHIMA, T; IDE, M et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 4, pp 429-432, issn 0947-8396Article

Negative (meth)acrylate resist materials based on novel crosslinking chemistryDIAKOUMAKOS, Constantinos D; RAPTIS, Ioannis; TSEREPI, Angeliki et al.Microelectronic engineering. 2001, Vol 57-58, pp 539-545, issn 0167-9317Conference Paper

Studies directed to the design and development of a high energy implant resistMONTGOMERY, Warren; PINGYONG XU; LU, Ping-Hung et al.SPIE proceedings series. 2000, pp 531-544, isbn 0-8194-3617-8Conference Paper

Synthesis and lithographic performance of poly-4-hydroxyphenyl ethyl methacrylate based negative resistsGELORME, Jeffrey D; KOSBAR, Laura L; GRAHAM, Teresita O et al.SPIE proceedings series. 2000, pp 559-568, isbn 0-8194-3617-8Conference Paper

Electrical conductivity and light emission in a system of metal nanoparticles and organic moleculesFEDOROVICH, R. D; KIYAYEV, O. E; TOMCHUK, P. M et al.International journal of electronics. 1996, Vol 81, Num 4, pp 401-405, issn 0020-7217Conference Paper